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| 3.0V 100mW RF Power Amplifier IC for Bluetooth ITT2305AK FEATURES * * * * * * * * 20 dB Gain - dramatically increases range of your low power bluetooth devices Single 3.0V positive supply - operates over a wide range of supply voltages Extremely small size - 6 pin SOT plastic package - 3 mm x 1.75 mm body size Output power easily controllable via VDD1 45% Power Added Efficiency 100% Duty Cycle 2000 to 2900 MHz Operation (R) Self-Aligned MSAG -Lite MESFET Process PRELIMINARY Vdd1 RFout/Vdd2 GND Vgg2 GND RFin/Vgg1 Description The ITT2305AK is an RF power amplifier based on GaAsTEK's Self-Aligned MSAG MESFET Process. This product is designed for use in 2.4 GHz ISM products as a booster for high power Bluetooth devices. Output power can be controlled to meet Bluetooth requirements via varying input power or the voltage on VDD1. Maximum Ratings (T Rating DC Supply Voltage RF Input Power Junction Temperature Storage Temperature Range A = 25 C unless otherwise noted) Symbol VDD PIN TJ TSTG Value 5.5 10 150 -40 to +150 Unit V mW C C ELECTRICAL CHARACTERISTICS VDD1= 2.5 V, VDD2 =3V,PIN= +0 dBm, Duty Cycle = 100 %, TA=25 C Characteristic Frequency Range Output Power, f = 2450 MHz Power Added Efficiency, f = 2450 MHz Harmonics Input VSWR Off Isolation (VDD=0 V) Thermal Resistance, junction to soldering point (pin 2) Load Mismatch (VDD = 5.5 V, VSWR = 8:1, PIN = 0 dBm) Stability (PIN = 0dBm, VDD = 0-5.5 V, Load VSWR = 5:1, fixed phases) Symbol POUT 2, 3, 4 -- S21 RTH -- -- Min 2400 Typ 20 45 -27 1.5 -25 Max 2500 Unit MHz dBm % dBc :1 dB 180 C/W No Degradation in Power Output All non-harmonically related outputs more than 60 dB below desired signal Specifications Subject to Change Without Notice 902574 B, January 2000 GaAsTEK 5310 Valley Park Drive Roanoke, VA 24019 USA www.gaastek.com Tel: 1-540-563-3949 1-888-563-3949 (USA) Fax: 1-540-563-8616 1 3.0V 100mW RF Power Amplifier IC for Bluetooth ITT2305AK PRELIMINARY 50 45 0.065 50 45 0.1 0.055 PAE Id2 0.09 0.08 0.07 0.06 0.05 0.04 Id1,Id2(Amps) 0.10 0.09 0.08 0.07 Id1,Id2(Amps) 0.06 0.05 0.04 0.03 0.02 0.01 0.00 -0.01 35 Id2 Pout Pout(dBm),PAE(%) PAE 0.045 Pout(dBm),PAe(%),Gain(dB) 40 40 35 30 25 20 15 10 5 30 25 20 15 10 0.035 0.025 0.015 Id1 Pout 0.03 0.02 0.01 0 0.005 5 0 2300 2350 2400 2450 2500 2550 Id2 -0.005 2600 0 -15 -10 -5 0 5 Frequency Pin(dBm) Figure 2. Output Power, Drain Currents and Efficiency vs. Input Power VDD2=3V , =2450MHz, VDD1=2.5V 50 Figure 1. Output Power, Drain Currents and Efficiency vs. Frequency VDD2=3V , VDD1=2.5V, PIN=0dBm 50 45 40 Pout(dBm),PAE(%) 35 30 25 20 15 10 5 0 0 1 2 VD2 3 4 5 0.10 0.09 0.08 45 40 35 Pout(dBm),PAE(%) 30 25 20 15 10 PAE Id2 Id2 PAE 0.07 0.06 0.05 0.04 Id1,Id2(Amps) Id1 Pout Id1 Pout 0.03 5 0.02 0.01 0.00 0 -5 0.0 0.5 1.0 VD1 1.5 2.0 2.5 3.0 Figure 3. Output Power, Drain Currents and Efficiency vs. Supply Voltage PIN=0dBm , =2450MHz, VDD1=2.5V Figure 4 Output Power, Drain Currents and Efficiency vs. VDD1 for Power Control PIN=0dBm , =2450MHz, VDD2=3V Specifications Subject to Change Without Notice 902574 B, January 2000 GaAsTEK 5310 Valley Park Drive Roanoke, VA 24019 USA www.gaastek.com Tel: 1-540-563-3949 1-888-563-3949 (USA) Fax: 1-540-563-8616 2 3.0V 100mW RF Power Amplifier IC for Bluetooth ITT2305AK 50 20 PRELIMINARY 0 -5 45 10 Pout(dBm),PAE(%) 40 35 30 25 20 15 Pout(dBm) 0 -10 -20 -30 -40 fo 2fo 3fo 4fo 5fo PAE -10 IRL -15 IRL(dB) Pout -20 -25 -30 -50 0 TEMP(C) 50 100 Figure 5. Harmonics PIN=0dBm , 0=2450MHz, VDD1=2.5V, VDD2=3V Figure 6. Output Power, Input return Loss and Efficiency vs. Temperature PIN=0dBm , =2450MHz, VDD1=2.5V, VDD2=3V MECHANICAL DATA: Figure 7. Component layout and printed circuit drawing for evaluation board. Specifications Subject to Change Without Notice 902574 B, January 2000 GaAsTEK 5310 Valley Park Drive Roanoke, VA 24019 USA www.gaastek.com Tel: 1-540-563-3949 1-888-563-3949 (USA) Fax: 1-540-563-8616 3 3.0V 100mW RF Power Amplifier IC for Bluetooth ITT2305AK APPLICATION INFORMATION: PRELIMINARY List of Componets: C1=100pF Dielectric Labs 300-213 C2=C3=100pF 0603 Murata C4=4700pF 0603 Murata GRM36X7R472K25AB C5=1.5pF 0603 Dielectric Labs CO6CF0R5B50U C6=0.5pF 0805 Dielectric Labs R1=210Ohm 0603 DigiKey P210HCT-ND L1=2.7nH 0603 CoilCraft TRS2356CT-ND L2=22nH 0603 CoilCraft 0603CS-22NXJBB 9GG 9GG & / & & & 5)RXW 5)LQ & & / 5 9JJ 9JJ Figure 8. Evaluation Board Schematic Specifications Subject to Change Without Notice 902574 B, January 2000 GaAsTEK 5310 Valley Park Drive Roanoke, VA 24019 USA www.gaastek.com Tel: 1-540-563-3949 1-888-563-3949 (USA) Fax: 1-540-563-8616 4 |
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